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In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts

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In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts

by Areej Alzahrani, Thomas G. Allen, Michaele De Bastiani, Emmanuel Van Kerschaver, George T. Harrison, Wenzhu Liu, Stefaan De Wolf
Communication Year: 2020 DOI: https://doi.org/10.1002/admi.202000589

Bibliography

Alzahrani, A., Allen, T. G., De, M., Van, E., Harrison, G. T., Liu, W., De, S., In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts. Advanced Materials Interfaces 2020, 2000589.

Extra Information

Areej's in situ plasma approach offers excellent thickness control and superior structural integrity upon thermal annealing at 1000 °C. This study, which gives implied open‐circuit voltage exceeding 700 mV published in Advanced Materials Interfaces.

Abstract

Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum‐mechanical tunneling. Here, plasma‐dissociated CO2 is investigated to grow in situ thin (<2 nm) SiOx films on c‐Si wafers as tunnel‐oxides for plasma‐deposited, hole‐collecting (i.e., p‐type) polysilicon contacts. It is found that such plasma processing offers excellent thickness control and superior structural integrity upon thermal annealing at 1000 °C, compared to state‐of‐the‐art wet‐chemical oxides. As a result, p‐type polysilicon contacts are achieved on n‐type c‐Si wafers that combine excellent surface passivation, resulting in an implied open‐circuit voltage exceeding 700 mV, with a contact resistance as low as 0.02 Ω cm2.

Keywords

polysilicon passivating contacts silicon Solar cells
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