Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells

by Xinbo Yang, Wenzhu Liu, Michele De Bastiani, Thomas G Allen, Jingxuan Kang, Hang Xu, Erkan Aydin, Lujia Xu, Qunyu Bi, Hoang Dang, Esra AlHabshi, Konstantinos Kotsovos, Ahmed AlSaggaf, Issam Gereige, Yimao Wan, Jun Peng, Christian Samundsett, Andres Cuevas
Article Year: 2019 DOI: https://doi.org/10.1016/j.joule.2019.03.008


Yang, X., Liu, W., De Bastiani, M., Allen, T., Kang, J., Xu, H., Aydin, E., Xu, L., Bi, Q., Dang, H., AlHabshi, E., Kotsovos, K., AlSaggaf, A., Gereige, I., Wan, Y., Peng, J., Samundsett, C., Cuevas, A., De Wolf, S. "Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells​" Joule 3, 1–14​.


​High-performance passivating contact is a prerequisite for high-efficiency crystalline silicon (c-Si) solar cells. In this work, an electron-conductive, hole-blocking contact based on titanium nitride (TiN) deposited by reactive magnetron sputtering is presented. Quasi-metallic TiN combined with an ultrathin SiO2passivation layer (SiO2/TiN) is demonstrated to be an effective electron-selective contact on c-Si, featuring a low-contact resistivity of 16.4 mΩ.cm2 and a tolerable recombination current parameter of ∼500 fA/cm2. By implementing the dual-function SiO2/TiN contact, which acts simultaneously as a surface passivating layer and metal electrode, an efficiency of 20% is achieved by an n-type c-Si solar cell with a simple structure. This work not only demonstrates a way to develop efficient n-type c-Si solar cells with dual-function metal nitride contacts at a low cost but also expands the pool of available carrier transport materials, from metal oxides to metal nitrides, for photovoltaic devices.


titanium nitride Passivating contact electron-selective contact hole blocking silicon solar cell