A Highly Conductive Titanium Oxynitride Electron‐Selective Contact for Efficient Photovoltaic Devices

by Xinbo Yang, Yuanbao Lin, Jiang Liu, Wenzhu Liu, Qunyu Bi, Xin Song, Jingxuan Kang, Fuzong Xu, Lujia Xu, Mohamed N. Hedhili, Derya Baran, Xiaohong Zhang, Thomas D. Anthopoulos, Stefaan De Wolf
Communication Year: 2020 DOI: https://doi.org/10.1002/adma.202002608


Yang, X., Lin, Y., Liu, J., Liu, W., Bi, Q., Song, X., Kang, J., Xu, F., Xu, L., Hedhili, M. N., Baran, D., Zhang, X., Anthopoulos, T. D., De, S., A Highly Conductive Titanium Oxynitride Electron‐Selective Contact for Efficient Photovoltaic Devices. Advanced Materials 2020, 2002608.


High‐quality carrier‐selective contacts with suitable electronic properties are a prerequisite for photovoltaic devices with high power conversion efficiency (PCE). In this work, an efficient electron‐selective contact, titanium oxynitride (TiON), is developed for crystalline silicon (c‐Si) and organic photovoltaic devices. Atomic‐layer‐deposited TiONis demonstrated to be highly conductive with a proper work function (4.3 eV) and a wide bandgap (3.4 eV). Thin TiONfilms simultaneously provide a moderate surface passivation and enable a low contact resistivity on c‐Si surfaces. By implementation of an optimal TiONy‐based contact, a state‐of‐the‐art PCE of 22.3% is achieved for a c‐Si solar cell featuring a full‐area dopant‐free electron‐selective contact. Simultaneously, conductive TiONis proven to be an efficient electron‐transport layer for organic photovoltaic (OPV) devices. A remarkably high PCE of 17.02% is achieved for an OPV device with an electron‐transport TiONlayer, which is superior to conventional ZnO‐based devices with a PCE of 16.10%. Atomic‐layer‐deposited TiONETL on a large area with a high uniformity may help accelerate the commercialization of emerging solar technologies.


electron‐selective contacts organic solar cells passivating contacts silicon solar cell titanium oxynitride