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19 October, 2018
KPV-LAB researchers developed a room temperature sputtered Nickel oxide (NiOx) hole transport thin films which can be used for perovskite solar cells, perovskite/silicon tandem solar cells, organic solar cells which employs low-temperature resilience substrates. NiOx is a promising hole transport layer, as it combines good chemical stability, high broadband optical transparency and a high work function. The developed films tested in p-i-n perovskite solar cells and showed a promising power conversion efficiency results (>17%) without any heteroatom doping and post-annealing process.
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Figure 1. J-V characteristics of the perovskite solar cells utilizing room-temperature sputtered NiOx layers. (Ref: Aydin, E., et al. ACS Applied Energy Materials DOI: 10.1021/acsaem.8b01263)
The recently published study confirms the scalability of the technique which is critical for the development of perovskite/silicon tandem solar cells. Figure 2 shows the NiOx layers (blue area) on the 6-inch silicon heterojunction solar cell (without metallization).
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Figure. NiOx thin films on the random textured silicon device (blue colored layer). SEM cross-section images confirm the conformal coating even the top of the pyramids and end of the valleys (Ref: Aydin, E., et al. ACS Applied Energy Materials DOI: 10.1021/acsaem.8b01263)
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